1200V MOSFET Modules Meet High Power Density Needs

Infineon Technologies has upgraded its EasyDUAL CoolSiC MOSFET modules with a new aluminum nitride AIN ceramic. The devices come in half-bridge configuration with an on-state resistance RDSon of 11m in an EasyDUAL 1B package and 6m in an EasyDUAL 2B package shown. With high-performance ceramic the 1200 V devices are suitable for high-power density applications 8230.

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